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| RO-P-DS-3009 - - 2W Ku-Band Power Amplifier 12.0-15.5 GHz Preliminary Information MAAPGM0018-DIE Features 12.0-15.5 GHz GaAs MMIC Amplifier 12.0-15.5 GHz Operation 2 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation Excellent Input and Output VSWR Self-Aligned MSAG(R) MESFET Process Primary Applications Point-to-Point Radio SatCom Description The MAAPGM0018-DIE is a 3-stage 2 W power amplifier with onchip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction SelfAligned Gate (MSAG(R)) MESFET Process. This process features silicon nitride passivation and polyimide scratch protection. Electrical Characteristics: TB = 40C1, Z0 = 50, VDD = 8V, VGG = -2V, Pin = 18 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Gate Current Drain Current 2nd Harmonic 3rd Harmonic Symbol f POUT PAE P1dB G VSWR IGG IDD 2f 3f Typical 12.0-15.5 33 25 32 18 1.5:1 <5 < 1.2 -40 -55 mA A dBc dBc Units GHz dBm % dBm dB 1. TB = MMIC Base Temperature RO-P-DS-3009 - - 2/6 2W Ku-Band Power Amplifier Maximum Operating Conditions 1 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG MAAPGM0018-DIE Absolute Maximum 23.0 +12.0 -3.0 900 7.0 180 -55 to +150 Units dBm V V mA W C C 1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may result in performance outside the guaranteed limits. Recommended Operating Conditions Characteristic Drain Voltage Gate Voltage Input Power Junction Temperature MMIC Base Temperature Symbol VDD VGG PIN Tj TB Min 4.0 -2.3 Typ 8.0 -2.0 Max 10.0 -1.5 21.0 150 Note 2 Unit V V dBm C C 2. Maximum MMIC Base Temperature = 150C --11.4 C/W * VDD * IDQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8.0 V. 3. Adjust VGG to set IDQ, (approximately @ -2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn gate voltage off last. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3009 - - 3/6 2W Ku-Band Power Amplifier MAAPGM0018-DIE 50 POUT PAE 40 50 40 30 30 20 20 10 10 0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 0 16.0 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 18 dBm. 50 POUT PAE 50 40 40 30 30 20 20 10 10 0 4 5 6 7 8 9 10 0 Drain Voltage (V) Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 13 GHz. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3009 - - 4/6 2W Ku-Band Power Amplifier 50 VDD = 4 VDD = 8 40 MAAPGM0018-DIE VDD = 6 30 20 10 0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage 30 GAIN 25 VSWR 6 5 20 4 15 3 10 2 5 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 1 16.0 Frequency (GHz) Figure 4. Small Signal Gain and Input VSWR vs. Frequency at VDD = 8V. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3009 - - 5/6 2W Ku-Band Power Amplifier MAAPGM0018-DIE Mechanical Information Chip Size: 4.404 x 3.380 x 0.075 mm 0.226mm. 0.152mm. 1.551mm. 2.501mm. (173 x 133 x 3 mils) 4.177mm. 4.404mm. 3.380mm. 3.228mm. VGG VD1, 2 VGG VD3 3.218mm. 1.690mm. OUT 1.690mm. IN VD1, 2 0.152mm. 0 0 VGG VGG VD3 0.162mm. Chip edge to bond pad dimensions are shown to the center of the bond 0.226mm. 1.551mm. 2.576mm. 4.252mm. 4.177mm. Figure 5. Die Layout Bond Pad Dimensions Pad RF In and Out DC Drain Supply Voltage VDD DC Gate Supply Voltage VGG Size (m) 100 x 200 200 x 150 150 x 150 Size (mils) 4x8 8x6 6x6 Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3009 - - 6/6 2W Ku-Band Power Amplifier 0.1 F 0.1 F 0.1 F MAAPGM0018-DIE VDD 100 pF 100 pF 100 pF VGG VD1, 2 VGG VD3 RFIN OUT RFOUT IN VGG VD1, 2 VGG VD3 100 pF 100 pF 100 pF VGG 35 0.1 F 0.1 F 0.1 F VDD Note: Indicated VGG pads represent the nominal bias configuration. Optionally, the VGG pads between VD 1, 2 and VD3 can be used if more convenient. Figure 6. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testing. Note: Indicated VGG pads represent the nominal bias configuration. Optionally, the VGG pads between VD 1, 2 and VD3 can be used if more convenient. Assembly Instructions: Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 C to less than 5 minutes. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. |
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